TPN4R712MD,L1Q

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TPN4R712MD,L1Q
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET P-CH 20V 36A 8TSON ADV
Datasheets:	TPN4R712MD,L1Q.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	332625 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 332625 pcs

Reference Price (In US Dollars)

5000 pcs: $0.109

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Specifications of TPN4R712MD,L1Q

Part Number	TPN4R712MD,L1Q	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET P-CH 20V 36A 8TSON ADV	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	332625 pcs	Data sheet	TPN4R712MD,L1Q.pdf
Vgs(th) (Max) @ Id	1.2V @ 1mA	Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-TSON Advance (3.3x3.3)
Series	U-MOSVI	Rds On (Max) @ Id, Vgs	4.7 mOhm @ 18A, 4.5V
Power Dissipation (Max)	42W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	8-PowerVDFN	Other Names	TPN4R712MD,L1Q(M TPN4R712MDL1QTR
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	65nC @ 5V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)	Current - Continuous Drain (Id) @ 25°C	36A (Tc)

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TPN4R712MD,L1Q

Product Overview

Reference Price (In US Dollars)

Specifications of TPN4R712MD,L1Q

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