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TPC6107(TE85L,F,M)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Image may be representation. See specifications for product details.

Product Overview

Part Number: TPC6107(TE85L,F,M)
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description MOSFET P-CH 20V 4.5A VS6 2-3T1A
Datasheets: 1.TPC6107(TE85L,F,M).pdf2.TPC6107(TE85L,F,M).pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 7022 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 7022 pcs
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Specifications of TPC6107(TE85L,F,M)

Part Number TPC6107(TE85L,F,M) Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 4.5A VS6 2-3T1A Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 7022 pcs Data sheet 1.TPC6107(TE85L,F,M).pdf2.TPC6107(TE85L,F,M).pdf
Vgs(th) (Max) @ Id 1.2V @ 200µA Vgs (Max) ±12V
Technology MOSFET (Metal Oxide) Supplier Device Package VS-6 (2.9x2.8)
Series U-MOSIV Rds On (Max) @ Id, Vgs 55 mOhm @ 2.2A, 4.5V
Power Dissipation (Max) 700mW (Ta) Packaging Tape & Reel (TR)
Package / Case SOT-23-6 Thin, TSOT-23-6 Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 5V FET Type P-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Drain to Source Voltage (Vdss) 20V Detailed Description P-Channel 20V 4.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)

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