Part Number | EMD30T2R | Manufacturer | LAPIS Semiconductor |
---|---|---|---|
Description | TRANS NPN/PNP PREBIAS 0.15W EMT6 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 1046408 pcs | Data sheet | EMD30T2R.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V, 30V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | Supplier Device Package | EMT6 |
Series | - | Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 10 kOhms, 1 kOhms | Power - Max | 150mW |
Packaging | Tape & Reel (TR) | Package / Case | SOT-563, SOT-666 |
Other Names | EMD30T2R-ND EMD30T2RTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz, 260MHz | Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V | Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA, 200mA | Base Part Number | *MD30 |
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