EMD12T2R

LAPIS Semiconductor

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Product Overview

Part Number:	EMD12T2R
Manufacturer/Brand:	LAPIS Semiconductor
Product description	TRANS NPN/PNP PREBIAS 0.15W EMT6
Datasheets:	1.EMD12T2R.pdf 2.EMD12T2R.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	182017 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 182017 pcs

Reference Price (In US Dollars)

1 pcs: $0.213

10 pcs: $0.149

25 pcs: $0.123

100 pcs: $0.098

250 pcs: $0.071

500 pcs: $0.058

1000 pcs: $0.045

2500 pcs: $0.04

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Specifications of EMD12T2R

Part Number	EMD12T2R	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN/PNP PREBIAS 0.15W EMT6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	182017 pcs	Data sheet	1.EMD12T2R.pdf 2.EMD12T2R.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Supplier Device Package	EMT6
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	47 kOhms	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	SOT-563, SOT-666
Other Names	EMD12T2RCT	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	10 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6	DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA
Base Part Number	MD12

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EMD12T2R

Product Overview

Reference Price (In US Dollars)

Specifications of EMD12T2R

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