EMD29T2R

LAPIS Semiconductor

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Product Overview

Part Number:	EMD29T2R
Manufacturer/Brand:	LAPIS Semiconductor
Product description	TRANS NPN/PNP PREBIAS 0.12W EMT6
Datasheets:	1.EMD29T2R.pdf 2.EMD29T2R.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	181093 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 181093 pcs

Reference Price (In US Dollars)

1 pcs: $0.166

10 pcs: $0.13

25 pcs: $0.109

100 pcs: $0.089

250 pcs: $0.074

500 pcs: $0.061

1000 pcs: $0.046

2500 pcs: $0.042

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Total:$0.166

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Specifications of EMD29T2R

Part Number	EMD29T2R	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN/PNP PREBIAS 0.12W EMT6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	181093 pcs	Data sheet	1.EMD29T2R.pdf 2.EMD29T2R.pdf
Voltage - Collector Emitter Breakdown (Max)	50V, 12V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Supplier Device Package	EMT6
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	1 kOhms, 10 kOhms	Power - Max	120mW
Packaging	Original-Reel®	Package / Case	SOT-563, SOT-666
Other Names	EMD29T2RDKR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	10 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz, 260MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6	DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V / 140 @ 100mA, 2V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA, 500mA
Base Part Number	*MD29

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EMD29T2R

Product Overview

Reference Price (In US Dollars)

Specifications of EMD29T2R

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