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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleTPCF8B01(TE85L,F,M

TPCF8B01(TE85L,F,M

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Image may be representation. See specifications for product details.

Product Overview

Part Number: TPCF8B01(TE85L,F,M
Manufacturer/Brand: Touchstone Semiconductor
Product description MOSFET P-CH 20V 2.7A VS-8
Datasheets: 1.TPCF8B01(TE85L,F,M.pdf2.TPCF8B01(TE85L,F,M.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 3066 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 3066 pcs
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Specifications of TPCF8B01(TE85L,F,M

Part Number TPCF8B01(TE85L,F,M Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 2.7A VS-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3066 pcs Data sheet 1.TPCF8B01(TE85L,F,M.pdf2.TPCF8B01(TE85L,F,M.pdf
Voltage - Test 470pF @ 10V Voltage - Breakdown VS-8 (2.9x1.9)
Vgs(th) (Max) @ Id 110 mOhm @ 1.4A, 4.5V Technology MOSFET (Metal Oxide)
Series U-MOSIII RoHS Status Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 2.7A (Ta) Polarization 8-SMD, Flat Lead
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Part Number TPCF8B01(TE85L,F,M
Input Capacitance (Ciss) (Max) @ Vds 6nC @ 5V Gate Charge (Qg) (Max) @ Vgs 1.2V @ 200µA
FET Feature P-Channel Expanded Description P-Channel 20V 2.7A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.9)
Drain to Source Voltage (Vdss) Schottky Diode (Isolated) Description MOSFET P-CH 20V 2.7A VS-8
Current - Continuous Drain (Id) @ 25°C 20V Capacitance Ratio 330mW (Ta)

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