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TPCF8A01(TE85L)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
TPCF8A01(TE85L) Image
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Product Overview

Part Number: TPCF8A01(TE85L)
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description MOSFET N-CH 20V 3A VS-8
Datasheets: 1.TPCF8A01(TE85L).pdf2.TPCF8A01(TE85L).pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 3117 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 3117 pcs
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Specifications of TPCF8A01(TE85L)

Part Number TPCF8A01(TE85L) Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 20V 3A VS-8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3117 pcs Data sheet 1.TPCF8A01(TE85L).pdf2.TPCF8A01(TE85L).pdf
Vgs(th) (Max) @ Id 1.2V @ 200µA Vgs (Max) ±12V
Technology MOSFET (Metal Oxide) Supplier Device Package VS-8 (2.9x1.5)
Series U-MOSIII Rds On (Max) @ Id, Vgs 49 mOhm @ 1.5A, 4.5V
Power Dissipation (Max) 330mW (Ta) Packaging Tape & Reel (TR)
Package / Case 8-SMD, Flat Lead Other Names TPCF8A01(TE85L)TR
TPCF8A01(TE85L,F)
TPCF8A01(TE85L,F)-ND
TPCF8A01FTR
TPCF8A01FTR-ND
TPCF8A01TE85L
TPCF8A01TE85LF
TPCF8A01TR
TPCF8A01TR-ND
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
FET Type N-Channel FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V Drain to Source Voltage (Vdss) 20V
Detailed Description N-Channel 20V 3A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5) Current - Continuous Drain (Id) @ 25°C 3A (Ta)

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