Part Number | TK560A65Y,S4X | Manufacturer | Toshiba Semiconductor and Storage |
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Description | MOSFET N-CH 650V 7A TO220SIS | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 66998 pcs | Data sheet | TK560A65Y,S4X.pdf |
Vgs(th) (Max) @ Id | 4V @ 240µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-220SIS |
Series | DTMOSV | Rds On (Max) @ Id, Vgs | 560 mOhm @ 3.5A, 10V |
Power Dissipation (Max) | 30W | Packaging | Tube |
Package / Case | TO-220-3 Full Pack | Other Names | TK560A65Y,S4X(S TK560A65YS4X TK560A65YS4X(S |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 300V |
Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V | Detailed Description | N-Channel 650V 7A (Tc) 30W Through Hole TO-220SIS |
Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
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