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RF4E100AJTCR

LAPIS SemiconductorLAPIS Semiconductor
RF4E100AJTCR Image
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Product Overview

Part Number: RF4E100AJTCR
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET N-CH 30V 10A HUML2020L8
Datasheets: 1.RF4E100AJTCR.pdf2.RF4E100AJTCR.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 98409 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 98409 pcs
Reference Price (In US Dollars)
1 pcs
$0.372
10 pcs
$0.326
100 pcs
$0.251
500 pcs
$0.186
1000 pcs
$0.149
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Specifications of RF4E100AJTCR

Part Number RF4E100AJTCR Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 10A HUML2020L8 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 98409 pcs Data sheet 1.RF4E100AJTCR.pdf2.RF4E100AJTCR.pdf
Vgs(th) (Max) @ Id 1.5V @ 1mA Vgs (Max) ±12V
Technology MOSFET (Metal Oxide) Supplier Device Package HUML2020L8
Series - Rds On (Max) @ Id, Vgs 12.4 mOhm @ 10A, 4.5V
Power Dissipation (Max) 2W (Tc) Packaging Cut Tape (CT)
Package / Case 8-PowerUDFN Other Names RF4E100AJTCRCT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V Detailed Description N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8
Current - Continuous Drain (Id) @ 25°C 10A (Ta)

Shipment

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