RF4E070BNTR

LAPIS Semiconductor

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Product Overview

Part Number:	RF4E070BNTR
Manufacturer/Brand:	LAPIS Semiconductor
Product description	MOSFET N-CH 30V 7A 8-HUML
Datasheets:	1.RF4E070BNTR.pdf 2.RF4E070BNTR.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	248349 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 248349 pcs

Reference Price (In US Dollars)

3000 pcs: $0.147

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Specifications of RF4E070BNTR

Part Number	RF4E070BNTR	Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 30V 7A 8-HUML	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	248349 pcs	Data sheet	1.RF4E070BNTR.pdf 2.RF4E070BNTR.pdf
Vgs(th) (Max) @ Id	2V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	HUML2020L8
Series	-	Rds On (Max) @ Id, Vgs	28.6 mOhm @ 7A, 10V
Power Dissipation (Max)	2W (Ta)	Packaging	Tape & Reel (TR)
Package / Case	8-PowerUDFN	Other Names	RF4E070BNTRTR
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 15V	Gate Charge (Qg) (Max) @ Vgs	8.9nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	30V
Detailed Description	N-Channel 30V 7A (Ta) 2W (Ta) Surface Mount HUML2020L8	Current - Continuous Drain (Id) @ 25°C	7A (Ta)

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RF4E070BNTR

Product Overview

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Specifications of RF4E070BNTR

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