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RDN100N20

LAPIS SemiconductorLAPIS Semiconductor
RDN100N20 Image
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Product Overview

Part Number: RDN100N20
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET N-CH 200V 10A TO-220FN
Datasheets: RDN100N20.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 3563 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 3563 pcs
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Specifications of RDN100N20

Part Number RDN100N20 Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 200V 10A TO-220FN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3563 pcs Data sheet RDN100N20.pdf
Vgs(th) (Max) @ Id 4V @ 1mA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-220FN
Series - Rds On (Max) @ Id, Vgs 360 mOhm @ 5A, 10V
Power Dissipation (Max) 35W (Tc) Packaging Bulk
Package / Case TO-220-3 Full Pack Operating Temperature 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 543pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V Detailed Description N-Channel 200V 10A (Ta) 35W (Tc) Through Hole TO-220FN
Current - Continuous Drain (Id) @ 25°C 10A (Ta)

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