RDN080N25FU6

LAPIS Semiconductor

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Product Overview

Part Number:	RDN080N25FU6
Manufacturer/Brand:	LAPIS Semiconductor
Product description	MOSFET N-CH 250V 8A TO220FN
Datasheets:	RDN080N25FU6.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	6581 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 6581 pcs

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Specifications of RDN080N25FU6

Part Number	RDN080N25FU6	Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 250V 8A TO220FN	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	6581 pcs	Data sheet	RDN080N25FU6.pdf
Vgs(th) (Max) @ Id	4V @ 1mA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220FN
Series	-	Rds On (Max) @ Id, Vgs	500 mOhm @ 4A, 10V
Power Dissipation (Max)	35W (Tc)	Packaging	Bulk
Package / Case	TO-220-3 Full Pack	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	543pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	250V	Detailed Description	N-Channel 250V 8A (Ta) 35W (Tc) Through Hole TO-220FN
Current - Continuous Drain (Id) @ 25°C	8A (Ta)

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RDN080N25FU6

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Specifications of RDN080N25FU6

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