SI3460DV-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI3460DV-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 20V 5.1A 6TSOP
Datasheets:	SI3460DV-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5951 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5951 pcs

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Specifications of SI3460DV-T1-GE3

Part Number	SI3460DV-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 5.1A 6TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5951 pcs	Data sheet	SI3460DV-T1-GE3.pdf
Vgs(th) (Max) @ Id	450mV @ 1mA (Min)	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	6-TSOP
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	27 mOhm @ 5.1A, 4.5V
Power Dissipation (Max)	1.1W (Ta)	Packaging	Tape & Reel (TR)
Package / Case	SOT-23-6 Thin, TSOT-23-6	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP	Current - Continuous Drain (Id) @ 25°C	5.1A (Ta)

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SI3460DV-T1-GE3

Product Overview

Specifications of SI3460DV-T1-GE3

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