SI3460BDV-T1-E3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI3460BDV-T1-E3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 20V 8A 6-TSOP
Datasheets:	SI3460BDV-T1-E3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	80921 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 80921 pcs

Reference Price (In US Dollars)

1 pcs: $0.394

10 pcs: $0.345

100 pcs: $0.266

500 pcs: $0.197

1000 pcs: $0.157

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Specifications of SI3460BDV-T1-E3

Part Number	SI3460BDV-T1-E3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 20V 8A 6-TSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	80921 pcs	Data sheet	SI3460BDV-T1-E3.pdf
Vgs(th) (Max) @ Id	1V @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	6-TSOP
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	27 mOhm @ 5.1A, 4.5V
Power Dissipation (Max)	2W (Ta), 3.5W (Tc)	Packaging	Original-Reel®
Package / Case	SOT-23-6 Thin, TSOT-23-6	Other Names	SI3460BDV-T1-E3DKR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	33 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	24nC @ 8V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Drain to Source Voltage (Vdss)	20V	Detailed Description	N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C	8A (Tc)

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Each product from Infinite-Electronics.net has been given a warranty period of 1 YEAR .During this period , we could provide free technical maintenance if there are any problems about our products.
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SI3460BDV-T1-E3

Product Overview

Reference Price (In US Dollars)

Specifications of SI3460BDV-T1-E3

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AFTER-SALES GUARANTEE

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