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SI2366DS-T1-GE3

Electro-Films (EFI) / VishayElectro-Films (EFI) / Vishay
Electro-Films (EFI) / Vishay
Image may be representation. See specifications for product details.

Product Overview

Part Number: SI2366DS-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET N-CH 30V 5.8A SOT-23
Datasheets: SI2366DS-T1-GE3.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 561997 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 561997 pcs
Reference Price (In US Dollars)
3000 pcs
$0.064
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Specifications of SI2366DS-T1-GE3

Part Number SI2366DS-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 5.8A SOT-23 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 561997 pcs Data sheet SI2366DS-T1-GE3.pdf
Vgs(th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET® Rds On (Max) @ Id, Vgs 36 mOhm @ 4.5A, 10V
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc) Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names SI2366DS-T1-GE3-ND
SI2366DS-T1-GE3TR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 335pF @ 15V Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236) Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)

Shipment

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