SI2356DS-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI2356DS-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 40V 4.3A SOT-23
Datasheets:	SI2356DS-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	754200 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 754200 pcs

Reference Price (In US Dollars)

3000 pcs: $0.045

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Specifications of SI2356DS-T1-GE3

Part Number	SI2356DS-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 40V 4.3A SOT-23	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	754200 pcs	Data sheet	SI2356DS-T1-GE3.pdf
Vgs(th) (Max) @ Id	1.5V @ 250µA	Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-236
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	51 mOhm @ 3.2A, 10V
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	SI2356DS-T1-GE3TR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 20V	Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V	Drain to Source Voltage (Vdss)	40V
Detailed Description	N-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236	Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)

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SI2356DS-T1-GE3

Product Overview

Reference Price (In US Dollars)

Specifications of SI2356DS-T1-GE3

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AFTER-SALES GUARANTEE

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