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FQD2N60CTM-WS

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
FQD2N60CTM-WS Image
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Product Overview

Part Number: FQD2N60CTM-WS
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 600V 1.9A
Datasheets: FQD2N60CTM-WS.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 74703 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 74703 pcs
Reference Price (In US Dollars)
1 pcs
$0.419
10 pcs
$0.371
100 pcs
$0.293
500 pcs
$0.227
1000 pcs
$0.179
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Specifications of FQD2N60CTM-WS

Part Number FQD2N60CTM-WS Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 1.9A Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 74703 pcs Data sheet FQD2N60CTM-WS.pdf
Vgs(th) (Max) @ Id 4V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package D-Pak
Series QFET® Rds On (Max) @ Id, Vgs 4.7 Ohm @ 950mA, 10V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) Packaging Original-Reel®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names FQD2N60CTM-WSDKR
FQD2N60CTM_WSDKR
FQD2N60CTM_WSDKR-ND
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 11 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)

Shipment

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FEDEX www.FedEx.com From $35.00 basic shipping fee depend on zone and country.
DHL www.DHL.com From $35.00 basic shipping fee depend on zone and country.
UPS www.UPS.com From $35.00 basic shipping fee depend on zone and country.
TNT www.TNT.com From $35.00 basic shipping fee depend on zone and country.

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