FQD2N60CTF

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQD2N60CTF
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 600V 1.9A DPAK
Datasheets:	1.FQD2N60CTF.pdf 2.FQD2N60CTF.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5278 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5278 pcs

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Specifications of FQD2N60CTF

Part Number	FQD2N60CTF	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V 1.9A DPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5278 pcs	Data sheet	1.FQD2N60CTF.pdf 2.FQD2N60CTF.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	D-Pak
Series	QFET®	Rds On (Max) @ Id, Vgs	4.7 Ohm @ 950mA, 10V
Power Dissipation (Max)	2.5W (Ta), 44W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	235pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	600V	Detailed Description	N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)

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FQD2N60CTF

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Specifications of FQD2N60CTF

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