FDB14AN06LA0

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDB14AN06LA0
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 60V 67A TO-263AB
Datasheets:	FDB14AN06LA0.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	2961 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 2961 pcs

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Specifications of FDB14AN06LA0

Part Number	FDB14AN06LA0	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 60V 67A TO-263AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2961 pcs	Data sheet	FDB14AN06LA0.pdf
Vgs(th) (Max) @ Id	3V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-263AB
Series	PowerTrench®	Rds On (Max) @ Id, Vgs	11.6 mOhm @ 67A, 10V
Power Dissipation (Max)	125W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	31nC @ 5V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Drain to Source Voltage (Vdss)	60V	Detailed Description	N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Surface Mount TO-263AB
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 67A (Tc)

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FDB14AN06LA0

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