Part Number | FDB13AN06A0 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 60V 62A TO-263AB | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 43318 pcs | Data sheet | FDB13AN06A0.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D²PAK |
Series | PowerTrench® | Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 62A, 10V |
Power Dissipation (Max) | 115W (Tc) | Packaging | Cut Tape (CT) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Other Names | FDB13AN06A0CT |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 6 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 60V | Detailed Description | N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK |
Current - Continuous Drain (Id) @ 25°C | 10.9A (Ta), 62A (Tc) |
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