FCP11N60N-F102

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FCP11N60N-F102
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 600V 10.8A TO220F
Datasheets:	FCP11N60N-F102.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	47479 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 47479 pcs

Reference Price (In US Dollars)

800 pcs: $0.643

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Specifications of FCP11N60N-F102

Part Number	FCP11N60N-F102	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V 10.8A TO220F	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	47479 pcs	Data sheet	FCP11N60N-F102.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220F
Series	-	Rds On (Max) @ Id, Vgs	299 mOhm @ 5.4A, 10V
Power Dissipation (Max)	94W (Tc)	Packaging	Tube
Package / Case	TO-220-3 Full Pack	Other Names	FCP11N60N_F102 FCP11N60N_F102-ND
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	12 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1505pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	35.6nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	600V	Detailed Description	N-Channel 600V 10.8A (Tc) 94W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C	10.8A (Tc)

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FCP11N60N-F102

Product Overview

Reference Price (In US Dollars)

Specifications of FCP11N60N-F102

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AFTER-SALES GUARANTEE

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