FCP11N60

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FCP11N60
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 600V 11A TO-220
Datasheets:	1.FCP11N60.pdf 2.FCP11N60.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	31639 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 31639 pcs

Reference Price (In US Dollars)

1 pcs: $0.961

10 pcs: $0.868

100 pcs: $0.697

500 pcs: $0.542

1000 pcs: $0.449

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Specifications of FCP11N60

Part Number	FCP11N60	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 600V 11A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	31639 pcs	Data sheet	1.FCP11N60.pdf 2.FCP11N60.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220-3
Series	SuperFET™	Rds On (Max) @ Id, Vgs	380 mOhm @ 5.5A, 10V
Power Dissipation (Max)	125W (Tc)	Packaging	Tube
Package / Case	TO-220-3	Other Names	FCP11N60_NL FCP11N60_NL-ND
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1490pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	600V
Detailed Description	N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3	Current - Continuous Drain (Id) @ 25°C	11A (Tc)

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FCP11N60

Product Overview

Reference Price (In US Dollars)

Specifications of FCP11N60

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