2SK3564(STA4,Q,M)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	2SK3564(STA4,Q,M)
Manufacturer/Brand:	Touchstone Semiconductor
Product description	MOSFET N-CH 900V 3A TO-220SIS
Datasheets:	1.2SK3564(STA4,Q,M).pdf 2.2SK3564(STA4,Q,M).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	44691 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 44691 pcs

Reference Price (In US Dollars)

1 pcs: $0.686

10 pcs: $0.621

50 pcs: $0.555

100 pcs: $0.499

250 pcs: $0.444

500 pcs: $0.388

1000 pcs: $0.322

2500 pcs: $0.30

5000 pcs: $0.288

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Total:$0.686

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Specifications of 2SK3564(STA4,Q,M)

Part Number	2SK3564(STA4,Q,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 900V 3A TO-220SIS	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	44691 pcs	Data sheet	1.2SK3564(STA4,Q,M).pdf 2.2SK3564(STA4,Q,M).pdf
Voltage - Test	700pF @ 25V	Voltage - Breakdown	TO-220SIS
Vgs(th) (Max) @ Id	4.3 Ohm @ 1.5A, 10V	Vgs (Max)	10V
Technology	MOSFET (Metal Oxide)	Series	π-MOSIV
RoHS Status	Tube	Rds On (Max) @ Id, Vgs	3A (Ta)
Polarization	TO-220-3 Full Pack	Other Names	2SK3564(Q) 2SK3564(STA4,Q) 2SK3564(STA4Q) 2SK3564(STA4Q)-ND 2SK3564(STA4QM) 2SK3564Q 2SK3564Q-ND 2SK3564STA4QM
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Part Number	2SK3564(STA4,Q,M)
Input Capacitance (Ciss) (Max) @ Vds	17nC @ 10V	IGBT Type	±30V
Gate Charge (Qg) (Max) @ Vgs	4V @ 1mA	FET Feature	N-Channel
Expanded Description	N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS	Drain to Source Voltage (Vdss)	-
Description	MOSFET N-CH 900V 3A TO-220SIS	Current - Continuous Drain (Id) @ 25°C	900V
Capacitance Ratio	40W (Tc)

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2SK3564(STA4,Q,M)

Product Overview

Reference Price (In US Dollars)

Specifications of 2SK3564(STA4,Q,M)

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AFTER-SALES GUARANTEE

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