TPN2R304PL,L1Q

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TPN2R304PL,L1Q
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N-CH 40V 80A TSON
Datasheets:	TPN2R304PL,L1Q.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	100116 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 100116 pcs

Reference Price (In US Dollars)

1 pcs: $0.34

10 pcs: $0.298

100 pcs: $0.23

500 pcs: $0.17

1000 pcs: $0.136

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Specifications of TPN2R304PL,L1Q

Part Number	TPN2R304PL,L1Q	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 40V 80A TSON	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	100116 pcs	Data sheet	TPN2R304PL,L1Q.pdf
Vgs(th) (Max) @ Id	2.4V @ 0.3mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-TSON Advance (3.3x3.3)
Series	U-MOSIX-H	Rds On (Max) @ Id, Vgs	2.3 mOhm @ 40A, 10V
Power Dissipation (Max)	630mW (Ta), 104W (Tc)	Packaging	Cut Tape (CT)
Package / Case	8-PowerVDFN	Other Names	TPN2R304PLL1QCT
Operating Temperature	175°C	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 20V	Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	40V
Detailed Description	N-Channel 40V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)	Current - Continuous Drain (Id) @ 25°C	80A (Tc)

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TPN2R304PL,L1Q

Product Overview

Reference Price (In US Dollars)

Specifications of TPN2R304PL,L1Q

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