Part Number | TPH8R80ANH,L1Q | Manufacturer | Toshiba Semiconductor and Storage |
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Description | MOSFET N CH 100V 32A 8-SOP | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 131324 pcs | Data sheet | TPH8R80ANH,L1Q.pdf |
Vgs(th) (Max) @ Id | 4V @ 500µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | 8-SOP Advance (5x5) |
Series | U-MOSVIII-H | Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 16A, 10V |
Power Dissipation (Max) | 1.6W (Ta), 61W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | 8-PowerVDFN | Other Names | TPH8R80ANH,L1Q(M TPH8R80ANHL1Q TPH8R80ANHL1QTR |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 50V | Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 32A (Tc) 1.6W (Ta), 61W (Tc) Surface Mount 8-SOP Advance (5x5) | Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
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