TPC8113(TE12L,Q)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TPC8113(TE12L,Q)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET P-CH 30V 11A SOP8 2-6J1B
Datasheets:	1.TPC8113(TE12L,Q).pdf 2.TPC8113(TE12L,Q).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	2807 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 2807 pcs

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Specifications of TPC8113(TE12L,Q)

Part Number	TPC8113(TE12L,Q)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET P-CH 30V 11A SOP8 2-6J1B	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2807 pcs	Data sheet	1.TPC8113(TE12L,Q).pdf 2.TPC8113(TE12L,Q).pdf
Vgs(th) (Max) @ Id	2V @ 1mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-SOP (5.5x6.0)
Series	-	Rds On (Max) @ Id, Vgs	10 mOhm @ 5.5A, 10V
Power Dissipation (Max)	1W (Ta)	Packaging	Tape & Reel (TR)
Package / Case	8-SOIC (0.173", 4.40mm Width)	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	4500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Drain to Source Voltage (Vdss)	30V	Detailed Description	P-Channel 30V 11A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Current - Continuous Drain (Id) @ 25°C	11A (Ta)

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TPC8113(TE12L,Q)

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Specifications of TPC8113(TE12L,Q)

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