TK6Q65W,S1Q

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TK6Q65W,S1Q
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N-CH 650V 5.8A IPAK-OS
Datasheets:	TK6Q65W,S1Q.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	68944 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 68944 pcs

Reference Price (In US Dollars)

1 pcs: $0.535

75 pcs: $0.427

150 pcs: $0.374

525 pcs: $0.29

1050 pcs: $0.229

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Specifications of TK6Q65W,S1Q

Part Number	TK6Q65W,S1Q	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 650V 5.8A IPAK-OS	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	68944 pcs	Data sheet	TK6Q65W,S1Q.pdf
Vgs(th) (Max) @ Id	3.5V @ 180µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	I-PAK
Series	DTMOSIV	Rds On (Max) @ Id, Vgs	1.05 Ohm @ 2.9A, 10V
Power Dissipation (Max)	60W (Tc)	Packaging	Tube
Package / Case	TO-251-3 Stub Leads, IPak	Other Names	TK6Q65W,S1Q(S TK6Q65WS1Q
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 300V	Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	650V
Detailed Description	N-Channel 650V 5.8A (Ta) 60W (Tc) Through Hole I-PAK	Current - Continuous Drain (Id) @ 25°C	5.8A (Ta)

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TK6Q65W,S1Q

Product Overview

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Specifications of TK6Q65W,S1Q

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