TK39N60W,S1VF

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TK39N60W,S1VF
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N CH 600V 38.8A TO247
Datasheets:	TK39N60W,S1VF.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	8778 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 8778 pcs

Reference Price (In US Dollars)

1 pcs: $4.32

30 pcs: $3.543

120 pcs: $3.197

510 pcs: $2.679

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Specifications of TK39N60W,S1VF

Part Number	TK39N60W,S1VF	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N CH 600V 38.8A TO247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	8778 pcs	Data sheet	TK39N60W,S1VF.pdf
Vgs(th) (Max) @ Id	3.7V @ 1.9mA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-247
Series	DTMOSIV	Rds On (Max) @ Id, Vgs	65 mOhm @ 19.4A, 10V
Power Dissipation (Max)	270W (Tc)	Packaging	Tube
Package / Case	TO-247-3	Other Names	TK39N60W,S1VF(S TK39N60WS1VF
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 300V	Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
FET Type	N-Channel	FET Feature	Super Junction
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	600V
Detailed Description	N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247	Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)

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TK39N60W,S1VF

Product Overview

Reference Price (In US Dollars)

Specifications of TK39N60W,S1VF

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