TK13A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TK13A60D(STA4,Q,M)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N-CH 600V 13A TO220SIS
Datasheets:	1.TK13A60D(STA4,Q,M).pdf 2.TK13A60D(STA4,Q,M).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	31317 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 31317 pcs

Reference Price (In US Dollars)

1 pcs: $1.232

10 pcs: $1.099

100 pcs: $0.901

500 pcs: $0.73

1000 pcs: $0.615

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Total:$1.232

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Specifications of TK13A60D(STA4,Q,M)

Part Number	TK13A60D(STA4,Q,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 600V 13A TO220SIS	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	31317 pcs	Data sheet	1.TK13A60D(STA4,Q,M).pdf 2.TK13A60D(STA4,Q,M).pdf
Vgs(th) (Max) @ Id	4V @ 1mA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220SIS
Series	π-MOSVII	Rds On (Max) @ Id, Vgs	430 mOhm @ 6.5A, 10V
Power Dissipation (Max)	50W (Tc)	Packaging	Tube
Package / Case	TO-220-3 Full Pack	Other Names	TK13A60DSTA4QM
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	600V
Detailed Description	N-Channel 600V 13A (Ta) 50W (Tc) Through Hole TO-220SIS	Current - Continuous Drain (Id) @ 25°C	13A (Ta)

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TK13A60D(STA4,Q,M)

Product Overview

Reference Price (In US Dollars)

Specifications of TK13A60D(STA4,Q,M)

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AFTER-SALES GUARANTEE

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