TK12A60W,S4VX

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TK12A60W,S4VX
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N CH 600V 11.5A TO-220SIS
Datasheets:	TK12A60W,S4VX.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	23892 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 23892 pcs

Reference Price (In US Dollars)

50 pcs: $1.337

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Specifications of TK12A60W,S4VX

Part Number	TK12A60W,S4VX	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N CH 600V 11.5A TO-220SIS	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	23892 pcs	Data sheet	TK12A60W,S4VX.pdf
Vgs(th) (Max) @ Id	3.7V @ 600µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220SIS
Series	DTMOSIV	Rds On (Max) @ Id, Vgs	300 mOhm @ 5.8A, 10V
Power Dissipation (Max)	35W (Tc)	Packaging	Tube
Package / Case	TO-220-3 Full Pack	Other Names	TK12A60W,S4VX(M TK12A60WS4VX
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	890pF @ 300V	Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
FET Type	N-Channel	FET Feature	Super Junction
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	600V
Detailed Description	N-Channel 600V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS	Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)

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TK12A60W,S4VX

Product Overview

Reference Price (In US Dollars)

Specifications of TK12A60W,S4VX

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