TJ8S06M3L(T6L1,NQ)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TJ8S06M3L(T6L1,NQ)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET P-CH 60V 8A DPAK-3
Datasheets:	1.TJ8S06M3L(T6L1,NQ).pdf 2.TJ8S06M3L(T6L1,NQ).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	174722 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 174722 pcs

Reference Price (In US Dollars)

2000 pcs: $0.192

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Total:$0.192

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Specifications of TJ8S06M3L(T6L1,NQ)

Part Number	TJ8S06M3L(T6L1,NQ)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET P-CH 60V 8A DPAK-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	174722 pcs	Data sheet	1.TJ8S06M3L(T6L1,NQ).pdf 2.TJ8S06M3L(T6L1,NQ).pdf
Vgs(th) (Max) @ Id	3V @ 1mA	Vgs (Max)	+10V, -20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	DPAK+
Series	U-MOSVI	Rds On (Max) @ Id, Vgs	104 mOhm @ 4A, 10V
Power Dissipation (Max)	27W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Other Names	TJ8S06M3L(T6L1NQ) TJ8S06M3LT6L1NQ
Operating Temperature	175°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	890pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Drain to Source Voltage (Vdss)	60V
Detailed Description	P-Channel 60V 8A (Ta) 27W (Tc) Surface Mount DPAK+	Current - Continuous Drain (Id) @ 25°C	8A (Ta)

Shipment
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TJ8S06M3L(T6L1,NQ)

Product Overview

Reference Price (In US Dollars)

Specifications of TJ8S06M3L(T6L1,NQ)

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AFTER-SALES GUARANTEE

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