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SSM6N15AFE,LM

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
SSM6N15AFE,LM Image
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Product Overview

Part Number: SSM6N15AFE,LM
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description MOSFET 2N-CH 30V 0.1A ES6
Datasheets: 1.SSM6N15AFE,LM.pdf2.SSM6N15AFE,LM.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 1426772 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 1426772 pcs
Reference Price (In US Dollars)
4000 pcs
$0.027
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Specifications of SSM6N15AFE,LM

Part Number SSM6N15AFE,LM Manufacturer Toshiba Semiconductor and Storage
Description MOSFET 2N-CH 30V 0.1A ES6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1426772 pcs Data sheet 1.SSM6N15AFE,LM.pdf2.SSM6N15AFE,LM.pdf
Vgs(th) (Max) @ Id 1.5V @ 100µA Supplier Device Package ES6 (1.6x1.6)
Series - Rds On (Max) @ Id, Vgs 4 Ohm @ 10mA, 4V
Power - Max 150mW Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names SSM6N15AFE,LM(A
SSM6N15AFE,LM(B
SSM6N15AFE,LM(T
SSM6N15AFE,LMTR
SSM6N15AFELM
SSM6N15AFELMTR
SSM6N15FE (TE85L,F)
SSM6N15FE(TE85L,F)
SSM6N15FE(TE85LF)TR
SSM6N15FE(TE85LF)TR-ND
SSM6N15FETE85LF
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 7.8pF @ 3V Gate Charge (Qg) (Max) @ Vgs -
FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount ES6 (1.6x1.6)
Current - Continuous Drain (Id) @ 25°C 100mA Base Part Number SSM6N15

Shipment

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