SSM6J53FE(TE85L,F)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	SSM6J53FE(TE85L,F)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET P-CH 20V 1.8A ES6
Datasheets:	1.SSM6J53FE(TE85L,F).pdf 2.SSM6J53FE(TE85L,F).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5253 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5253 pcs

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Specifications of SSM6J53FE(TE85L,F)

Part Number	SSM6J53FE(TE85L,F)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET P-CH 20V 1.8A ES6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5253 pcs	Data sheet	1.SSM6J53FE(TE85L,F).pdf 2.SSM6J53FE(TE85L,F).pdf
Vgs(th) (Max) @ Id	1V @ 1mA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	ES6 (1.6x1.6)
Series	-	Rds On (Max) @ Id, Vgs	136 mOhm @ 1A, 2.5V
Power Dissipation (Max)	500mW (Ta)	Packaging	Tape & Reel (TR)
Package / Case	SOT-563, SOT-666	Other Names	SSM6J53FE(TE85LF)TR SSM6J53FETE85LF
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	568pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	10.6nC @ 4V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 2.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 1.8A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6)	Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)

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SSM6J53FE(TE85L,F)

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Specifications of SSM6J53FE(TE85L,F)

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