Part Number | SSM6J216FE,LF | Manufacturer | Toshiba Semiconductor and Storage |
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Description | MOSFET P-CHANNEL 12V 4.8A ES6 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 556970 pcs | Data sheet | SSM6J216FE,LF.pdf |
Vgs(th) (Max) @ Id | 1V @ 1mA | Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | ES6 |
Series | U-MOSVI | Rds On (Max) @ Id, Vgs | 32 mOhm @ 3.5A, 4.5V |
Power Dissipation (Max) | 700mW (Ta) | Packaging | Tape & Reel (TR) |
Package / Case | SOT-563, SOT-666 | Other Names | SSM6J216FE,LF(A SSM6J216FELF SSM6J216FELF(A SSM6J216FELF-ND SSM6J216FELFTR |
Operating Temperature | 150°C | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V | Gate Charge (Qg) (Max) @ Vgs | 12.7nC @ 4.5V |
FET Type | P-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | Drain to Source Voltage (Vdss) | 12V |
Detailed Description | P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6 | Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
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