Part Number | RN4907FE,LF(CB | Manufacturer | Toshiba Semiconductor and Storage |
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Description | TRANS NPN/PNP PREBIAS 0.1W ES6 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 416300 pcs | Data sheet | RN4907FE,LF(CB.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | Supplier Device Package | ES6 |
Series | - | Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 10 kOhms | Power - Max | 100mW |
Packaging | Cut Tape (CT) | Package / Case | SOT-563, SOT-666 |
Other Names | RN4907FE(T5LFT)CT RN4907FE(T5LFT)CT-ND RN4907FELF(CBCT RN4907FELF(CTCT RN4907FELF(CTCT-ND |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz, 200MHz | Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
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