MT3S113TU,LF

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	MT3S113TU,LF
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	RF SIGE HETEROJUNCTION BIPOLAR N
Datasheets:	MT3S113TU,LF.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	330749 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 330749 pcs

Reference Price (In US Dollars)

3000 pcs: $0.093

6000 pcs: $0.088

15000 pcs: $0.084

30000 pcs: $0.082

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Total:$0.093

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Specifications of MT3S113TU,LF

Part Number	MT3S113TU,LF	Manufacturer	Toshiba Semiconductor and Storage
Description	RF SIGE HETEROJUNCTION BIPOLAR N	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	330749 pcs	Data sheet	MT3S113TU,LF.pdf
Voltage - Collector Emitter Breakdown (Max)	5.3V	Transistor Type	NPN
Supplier Device Package	UFM	Series	-
Power - Max	900mW	Packaging	Tape & Reel (TR)
Package / Case	3-SMD, Flat Leads	Other Names	MT3S113TU,LF(B MT3S113TULF MT3S113TULF(B MT3S113TULFTR
Operating Temperature	150°C (TJ)	Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	12 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Gain	12.5dB	Frequency - Transition	11.2GHz
Detailed Description	RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA

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MT3S113TU,LF

Product Overview

Reference Price (In US Dollars)

Specifications of MT3S113TU,LF

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