2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	2SJ668(TE16L1,NQ)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET P-CHANNEL 60V 5A PW-MOLD
Datasheets:	2SJ668(TE16L1,NQ).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5376 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5376 pcs

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Specifications of 2SJ668(TE16L1,NQ)

Part Number	2SJ668(TE16L1,NQ)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET P-CHANNEL 60V 5A PW-MOLD	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5376 pcs	Data sheet	2SJ668(TE16L1,NQ).pdf
Vgs(th) (Max) @ Id	2V @ 1mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	PW-MOLD
Series	U-MOSIII	Rds On (Max) @ Id, Vgs	170 mOhm @ 2.5A, 10V
Power Dissipation (Max)	20W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Other Names	2SJ668(TE16L1NQ)
Operating Temperature	150°C	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Drain to Source Voltage (Vdss)	60V
Detailed Description	P-Channel 60V 5A (Ta) 20W (Tc) Surface Mount PW-MOLD	Current - Continuous Drain (Id) @ 25°C	5A (Ta)

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2SJ668(TE16L1,NQ)

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Specifications of 2SJ668(TE16L1,NQ)

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