2SJ360(F)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	2SJ360(F)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET P-CH 60V 1A SC-62
Datasheets:	1.2SJ360(F).pdf 2.2SJ360(F).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	3276 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 3276 pcs

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Specifications of 2SJ360(F)

Part Number	2SJ360(F)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET P-CH 60V 1A SC-62	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3276 pcs	Data sheet	1.2SJ360(F).pdf 2.2SJ360(F).pdf
Vgs(th) (Max) @ Id	2V @ 1mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	PW-MINI
Series	-	Rds On (Max) @ Id, Vgs	730 mOhm @ 500mA, 10V
Power Dissipation (Max)	500mW (Ta)	Packaging	Bulk
Package / Case	TO-243AA	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	155pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 10V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Drain to Source Voltage (Vdss)	60V	Detailed Description	P-Channel 60V 1A (Ta) 500mW (Ta) Surface Mount PW-MINI
Current - Continuous Drain (Id) @ 25°C	1A (Ta)

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2SJ360(F)

Product Overview

Specifications of 2SJ360(F)

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AFTER-SALES GUARANTEE

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