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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single2SA1869-Y,MTSAQ(J

2SA1869-Y,MTSAQ(J

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
2SA1869-Y,MTSAQ(J Image
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Product Overview

Part Number: 2SA1869-Y,MTSAQ(J
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS PNP 3A 50V TO220-3
Datasheets: 2SA1869-Y,MTSAQ(J.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 3762 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 3762 pcs
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Specifications of 2SA1869-Y,MTSAQ(J

Part Number 2SA1869-Y,MTSAQ(J Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 3A 50V TO220-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3762 pcs Data sheet 2SA1869-Y,MTSAQ(J.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A
Transistor Type PNP Supplier Device Package TO-220NIS
Series - Power - Max 10W
Packaging Bulk Package / Case TO-220-3 Full Pack
Other Names 2SA1869-YMTSAQ(J
2SA1869YMTSAQJ		 Operating Temperature 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor PNP 50V 3A 100MHz 10W Through Hole TO-220NIS DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V
Current - Collector Cutoff (Max) 1µA (ICBO) Current - Collector (Ic) (Max) 3A

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