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TSM1NB60CH C5G

TSC (Taiwan Semiconductor)TSC (Taiwan Semiconductor)
TSM1NB60CH C5G Image
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Product Overview

Part Number: TSM1NB60CH C5G
Manufacturer/Brand: TSC (Taiwan Semiconductor)
Product description MOSFET N-CHANNEL 600V 1A TO251
Datasheets: TSM1NB60CH C5G.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 113700 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 113700 pcs
Reference Price (In US Dollars)
1 pcs
$0.332
10 pcs
$0.292
100 pcs
$0.225
500 pcs
$0.167
1000 pcs
$0.134
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Specifications of TSM1NB60CH C5G

Part Number TSM1NB60CH C5G Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CHANNEL 600V 1A TO251 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 113700 pcs Data sheet TSM1NB60CH C5G.pdf
Vgs(th) (Max) @ Id 4.5V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-251 (IPAK)
Series - Rds On (Max) @ Id, Vgs 10 Ohm @ 500mA, 10V
Power Dissipation (Max) 39W (Tc) Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names TSM1NB60CH C5G-ND
TSM1NB60CHC5G
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 52 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 138pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 1A (Tc) 39W (Tc) Through Hole TO-251 (IPAK)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)

Shipment

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