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HomeProductsDiscrete Semiconductor ProductsTransistors - IGBTs - SingleAPT33GF120LRDQ2G

APT33GF120LRDQ2G

MicrosemiMicrosemi
APT33GF120LRDQ2G Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: APT33GF120LRDQ2G
Manufacturer/Brand: Microsemi
Product description IGBT 1200V 64A 357W TO264
Datasheets: APT33GF120LRDQ2G.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 4960 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 4960 pcs
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Specifications of APT33GF120LRDQ2G

Part Number APT33GF120LRDQ2G Manufacturer Microsemi
Description IGBT 1200V 64A 357W TO264 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4960 pcs Data sheet APT33GF120LRDQ2G.pdf
Voltage - Collector Emitter Breakdown (Max) 1200V Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Test Condition 800V, 25A, 4.3 Ohm, 15V Td (on/off) @ 25°C 14ns/185ns
Switching Energy 1.315mJ (on), 1.515mJ (off) Supplier Device Package TO-264 [L]
Series - Power - Max 357W
Packaging Tube Package / Case TO-264-3, TO-264AA
Other Names APT33GF120LRDQ2GMI
APT33GF120LRDQ2GMI-ND		 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Type Standard
IGBT Type NPT Gate Charge 170nC
Detailed Description IGBT NPT 1200V 64A 357W Through Hole TO-264 [L] Current - Collector Pulsed (Icm) 75A
Current - Collector (Ic) (Max) 64A

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