Part Number | RT1A060APTR | Manufacturer | LAPIS Semiconductor |
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Description | MOSFET P-CH 12V 6A TSST8 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 193929 pcs | Data sheet | 1.RT1A060APTR.pdf2.RT1A060APTR.pdf |
Vgs(th) (Max) @ Id | 1V @ 1mA | Vgs (Max) | -8V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | 8-TSST |
Series | - | Rds On (Max) @ Id, Vgs | 19 mOhm @ 6A, 4.5V |
Power Dissipation (Max) | 600mW (Ta) | Packaging | Cut Tape (CT) |
Package / Case | 8-SMD, Flat Lead | Other Names | RT1A060APCT RT1A060APTRCT RT1A060APTRCT-ND |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 10 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 7800pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 4.5V | FET Type | P-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Drain to Source Voltage (Vdss) | 12V | Detailed Description | P-Channel 12V 6A (Ta) 600mW (Ta) Surface Mount 8-TSST |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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