RS1E170GNTB

LAPIS Semiconductor

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Product Overview

Part Number:	RS1E170GNTB
Manufacturer/Brand:	LAPIS Semiconductor
Product description	MOSFET N-CH 30V 17A 8-HSOP
Datasheets:	1.RS1E170GNTB.pdf 2.RS1E170GNTB.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	421206 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 421206 pcs

Reference Price (In US Dollars)

2500 pcs: $0.09

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Specifications of RS1E170GNTB

Part Number	RS1E170GNTB	Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 30V 17A 8-HSOP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	421206 pcs	Data sheet	1.RS1E170GNTB.pdf 2.RS1E170GNTB.pdf
Vgs(th) (Max) @ Id	2.5V @ 1mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-HSOP
Series	-	Rds On (Max) @ Id, Vgs	6.7 mOhm @ 17A, 10V
Power Dissipation (Max)	3W (Ta), 23.7W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	8-PowerTDFN	Other Names	RS1E170GNTBTR
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	40 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	720pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	30V	Detailed Description	N-Channel 30V 17A (Ta) 3W (Ta), 23.7W (Tc) Surface Mount 8-HSOP
Current - Continuous Drain (Id) @ 25°C	17A (Ta)

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RS1E170GNTB

Product Overview

Reference Price (In US Dollars)

Specifications of RS1E170GNTB

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