RQ3E180BNTB

LAPIS Semiconductor

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Product Overview

Part Number:	RQ3E180BNTB
Manufacturer/Brand:	LAPIS Semiconductor
Product description	MOSFET N-CHANNEL 30V 39A 8HSMT
Datasheets:	1.RQ3E180BNTB.pdf 2.RQ3E180BNTB.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	474105 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 474105 pcs

Reference Price (In US Dollars)

3000 pcs: $0.081

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Specifications of RQ3E180BNTB

Part Number	RQ3E180BNTB	Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CHANNEL 30V 39A 8HSMT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	474105 pcs	Data sheet	1.RQ3E180BNTB.pdf 2.RQ3E180BNTB.pdf
Vgs(th) (Max) @ Id	2.5V @ 1mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-HSMT (3.2x3)
Series	-	Rds On (Max) @ Id, Vgs	3.9 mOhm @ 18A, 10V
Power Dissipation (Max)	2W (Ta), 20W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	8-PowerVDFN	Other Names	RQ3E180BNTBTR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	40 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	37nC @ 4.5V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	30V	Detailed Description	N-Channel 30V 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)
Current - Continuous Drain (Id) @ 25°C	39A (Tc)

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RQ3E180BNTB

Product Overview

Reference Price (In US Dollars)

Specifications of RQ3E180BNTB

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