R6002END3TL1

LAPIS Semiconductor

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Product Overview

Part Number:	R6002END3TL1
Manufacturer/Brand:	LAPIS Semiconductor
Product description	NCH 600V 2A POWER MOSFET
Datasheets:	R6002END3TL1.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	75198 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 75198 pcs

Reference Price (In US Dollars)

1 pcs: $0.412

10 pcs: $0.366

100 pcs: $0.289

500 pcs: $0.224

1000 pcs: $0.177

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Specifications of R6002END3TL1

Part Number	R6002END3TL1	Manufacturer	LAPIS Semiconductor
Description	NCH 600V 2A POWER MOSFET	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	75198 pcs	Data sheet	R6002END3TL1.pdf
Vgs(th) (Max) @ Id	4V @ 1mA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-252
Series	-	Rds On (Max) @ Id, Vgs	3.4 Ohm @ 500mA, 10V
Power Dissipation (Max)	26W (Tc)	Packaging	Original-Reel®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Other Names	R6002END3TL1DKR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	65pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	600V	Detailed Description	N-Channel 600V 1.7A (Tc) 26W (Tc) Surface Mount TO-252
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)

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R6002END3TL1

Product Overview

Reference Price (In US Dollars)

Specifications of R6002END3TL1

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