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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedIMD16AT108

IMD16AT108

LAPIS SemiconductorLAPIS Semiconductor
IMD16AT108 Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: IMD16AT108
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS NPN/PNP PREBIAS 0.3W SMT6
Datasheets: 1.IMD16AT108.pdf2.IMD16AT108.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 631684 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 631684 pcs
Reference Price (In US Dollars)
3000 pcs
$0.047
6000 pcs
$0.044
15000 pcs
$0.041
30000 pcs
$0.038
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Specifications of IMD16AT108

Part Number IMD16AT108 Manufacturer LAPIS Semiconductor
Description TRANS NPN/PNP PREBIAS 0.3W SMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 631684 pcs Data sheet 1.IMD16AT108.pdf2.IMD16AT108.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Supplier Device Package SMT6
Series - Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 100 kOhms, 2.2 kOhms Power - Max 300mW
Packaging Tape & Reel (TR) Package / Case SC-74, SOT-457
Other Names IMD16AT108-ND
IMD16AT108TR		 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA, 500mA 250MHz 300mW Surface Mount SMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V / 82 @ 50mA, 5V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 100mA, 500mA
Base Part Number MD16A

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