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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedEMH2T2R

EMH2T2R

LAPIS SemiconductorLAPIS Semiconductor
EMH2T2R Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: EMH2T2R
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS 2NPN PREBIAS 0.15W EMT6
Datasheets: 1.EMH2T2R.pdf2.EMH2T2R.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 948187 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 948187 pcs
Reference Price (In US Dollars)
8000 pcs
$0.037
16000 pcs
$0.034
24000 pcs
$0.031
56000 pcs
$0.029
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Specifications of EMH2T2R

Part Number EMH2T2R Manufacturer LAPIS Semiconductor
Description TRANS 2NPN PREBIAS 0.15W EMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 948187 pcs Data sheet 1.EMH2T2R.pdf2.EMH2T2R.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Transistor Type 2 NPN - Pre-Biased (Dual) Supplier Device Package EMT6
Series - Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-563, SOT-666
Other Names EMH2T2R-ND
EMH2T2RTR		 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number *MH2

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