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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedEMH1FHAT2R

EMH1FHAT2R

LAPIS SemiconductorLAPIS Semiconductor
EMH1FHAT2R Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: EMH1FHAT2R
Manufacturer/Brand: LAPIS Semiconductor
Product description NPN+NPN DIGITAL TRANSISTOR (CORR
Datasheets: 1.EMH1FHAT2R.pdf2.EMH1FHAT2R.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 1761746 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 1761746 pcs
Reference Price (In US Dollars)
8000 pcs
$0.02
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Specifications of EMH1FHAT2R

Part Number EMH1FHAT2R Manufacturer LAPIS Semiconductor
Description NPN+NPN DIGITAL TRANSISTOR (CORR Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1761746 pcs Data sheet 1.EMH1FHAT2R.pdf2.EMH1FHAT2R.pdf
Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Transistor Type 2 NPN - Pre-Biased (Dual) Supplier Device Package EMT6
Series Automotive, AEC-Q101 Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 22 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-563, SOT-666
Other Names EMH1FHAT2RTR Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 7 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 5V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 100mA

Shipment

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