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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedEMD9FHAT2R

EMD9FHAT2R

LAPIS SemiconductorLAPIS Semiconductor
EMD9FHAT2R Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: EMD9FHAT2R
Manufacturer/Brand: LAPIS Semiconductor
Product description PNP+NPN DIGITAL TRANSISTOR (CORR
Datasheets: 1.EMD9FHAT2R.pdf2.EMD9FHAT2R.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 1604233 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 1604233 pcs
Reference Price (In US Dollars)
8000 pcs
$0.02
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Specifications of EMD9FHAT2R

Part Number EMD9FHAT2R Manufacturer LAPIS Semiconductor
Description PNP+NPN DIGITAL TRANSISTOR (CORR Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1604233 pcs Data sheet 1.EMD9FHAT2R.pdf2.EMD9FHAT2R.pdf
Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Supplier Device Package EMT6
Series Automotive, AEC-Q101 Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 10 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-563, SOT-666
Other Names EMD9FHAT2RTR Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 7 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 100mA

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