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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedDTC363EUT106

DTC363EUT106

LAPIS SemiconductorLAPIS Semiconductor
DTC363EUT106 Image
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Product Overview

Part Number: DTC363EUT106
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS PREBIAS NPN 200MW UMT3
Datasheets: DTC363EUT106.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 4602 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 4602 pcs
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Specifications of DTC363EUT106

Part Number DTC363EUT106 Manufacturer LAPIS Semiconductor
Description TRANS PREBIAS NPN 200MW UMT3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4602 pcs Data sheet DTC363EUT106.pdf
Voltage - Collector Emitter Breakdown (Max) 20V Vce Saturation (Max) @ Ib, Ic 80mV @ 2.5mA, 50mA
Transistor Type NPN - Pre-Biased Supplier Device Package UMT3
Series - Resistor - Emitter Base (R2) 6.8 kOhms
Resistor - Base (R1) 6.8 kOhms Power - Max 200mW
Packaging Tape & Reel (TR) Package / Case SC-70, SOT-323
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 600mA 200MHz 200mW Surface Mount UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 600mA
Base Part Number DTC363

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